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| e PTB 20053 60 Watts, 860-900 MHz Cellular Radio RF Power Transistor Description The 20053 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 860 to 900 MHz. Rated at 60 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 60 Watts, 860-900 MHz Class AB Characteristics 50% Collector Efficiency at 60 Watts Gold Metallization Silicon Nitride Passivated Gain vs. Frequency (as measured in a broadband circuit) 13 12 VCC = 25 V ICQ = 200 mA Pout = 60 W Gain (dB) 11 10 9 8 7 850 200 53 LOT CO DE 860 870 880 890 900 910 Frequency (MHz) Package 20200 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 65 4.0 8.0 145 0.83 -40 to +150 1.2 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20053 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 50 mA VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 3.5 20 Typ 30 70 5.0 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA, f = 900 MHz) Collector Efficiency (VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA, f = 900 MHz) Load Mismatch Tolerance (VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA, f = 900 MHz--all phase angles at frequency of test) Symbol Gpe C Min 8.0 50 -- Typ 9.5 -- -- Max -- -- 10:1 Units dB % -- Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 25 Vdc, Pout = 60 W, ICQ = 200 mA) Z Source Z Load Frequency MHz 860 880 900 R 4.3 4.1 4.1 Z Source jX 0.2 1.1 1.7 R 3.0 2.8 2.8 Z Load jX 0.6 1.4 1.9 2 e Typical Performance Efficiency vs. Frequency (as measured in a broadband circuit) 80 70 PTB 20053 Efficiency (%) 60 50 40 30 20 850 VCC = 25 V ICQ = 200 mA Pout = 60 W 860 870 880 890 900 910 Frequency (MHz) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) Ericsson Components AB 1995 EUS/KR 1301-PTB 20053 Uen Rev. D 09-28-98 3 |
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